A STUDY OF EPITAXIALLY STABILIZED FESI2 BY SURFACE-ENHANCED RAMAN-SCATTERING

Authors
MO YJ VONKANEL H ONDA N WACHTER P MATTEI G
Citation
Yj. Mo et al., A STUDY OF EPITAXIALLY STABILIZED FESI2 BY SURFACE-ENHANCED RAMAN-SCATTERING, Journal of applied physics, 76(3), 1994, pp. 1968-1972
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
76
Issue
3
Year of publication
1994
Pages
1968 - 1972
Database
ISI
SICI code
0021-8979(1994)76:3<1968:ASOESF>2.0.ZU;2-9
Abstract
Epitaxially stabilized films with the defect CsCl structure, that were grown by molecular beam epitaxy, have been studied by surface enhance d Raman scattering using a silver overlayer. We have observed that the defect-induced phonon density of states features in the Raman signal shift from 256 cm-1 for a coherently strained film to 263 cm-1 for a r elaxed one, The lower energy observed for the former can qualitatively be explained by the expansive trigonal distortion arising from the mi sfit of -0.5%.