ANALYTICAL STUDIES ON MULTIPLE DELTA-DOPING IN DIAMOND THIN-FILMS FOREFFICIENT HOLE EXCITATION AND CONDUCTIVITY ENHANCEMENT

Beneficial features of boron multiple delta doping (MDD) in synthetic diamond thin films are studied analytically and compared with MDD in G aAs. In spite of a deep boron level (approximately 0.3 eV), MDD greatl y helps the thermal excitation of holes via elevation of the Fermi lev el toward the acceptor boron level. Thus, a hole excitation 6-7 times higher than that of the uniformly doped one is obtained. Furthermore, more than 90% of holes are in the spacer layer (i-diamond) where the m obility is high, resulting in a film conductance of the MDD structure more than 20 times higher than that of the conventional one when the s ame amount of boron is uniformly doped.