Jj. Heremans et al., MOBILITY ANISOTROPY OF 2-DIMENSIONAL HOLE SYSTEMS IN (311)A GAAS ALXGA1-XAS HETEROJUNCTIONS, Journal of applied physics, 76(3), 1994, pp. 1980-1982
We have measured the low-temperature mobility of high-quality two-dime
nsional hole systems confined at the (311)A GaAs/AlxGa1-xAs interface.
Variables were the thickness of the spacer layer separating the carri
ers from the Si dopants, and the carrier sheet density. A large anisot
ropy in mobility is found between the [233BAR] and [011BAR] directions
. While the high mobility [233BAR] direction yields results analogous
to the two-dimensional electron case, we conclude that transport along
[011BAR] is almost entirely determined by anisotropic interface rough
ness scattering.