INTRASUBBAND SCATTERING IN HIGHLY EXCITED SEMICONDUCTOR QUANTUM-WELLSWITH BIAXIAL STRAIN

Intrasubband scattering rates are calculated for electrons and holes a t finite temperatures in highly excited semiconductor strained-layer q uantum-well structures. Carrier-carrier and carrier-phonon interaction s are taken into account on an equal basis within the fully dynamic ra ndom-phase approximation for multisubband structures. It will be shown that the strain-induced changes in the valence-band structure exert a significant influence on the scattering rates of the electrons as wel l as the holes. The screening of carrier-phonon interaction by the ele ctron-hole plasma in the coupled electron-hole-phonon system is discus sed and analyzed.