Intrasubband scattering rates are calculated for electrons and holes a
t finite temperatures in highly excited semiconductor strained-layer q
uantum-well structures. Carrier-carrier and carrier-phonon interaction
s are taken into account on an equal basis within the fully dynamic ra
ndom-phase approximation for multisubband structures. It will be shown
that the strain-induced changes in the valence-band structure exert a
significant influence on the scattering rates of the electrons as wel
l as the holes. The screening of carrier-phonon interaction by the ele
ctron-hole plasma in the coupled electron-hole-phonon system is discus
sed and analyzed.