We develop a microscopic theory for charge transport through a single-
electron transistor containing a superconducting grain. Both tunnel cu
rrent and shot noise are shown to be sensitive to the parity of the el
ectron number on the grain. In particular, tunneling may cross over fr
om pair channels to two distinct single-particle channels at finite vo
ltage. The two corresponding threshold voltages are sensitive to the c
ircuit parameters. While it is difficult to identify them from the I-V
curve, they can be determined from the normalized zero-frequency nois
e and the finite-frequency noise spectrum.