PRESSURE-DEPENDENT OPERATION IN POLY(3-ALKYLTHIOPHENE) FIELD-EFFECT TRANSISTORS AND SCHOTTKY DIODES

Authors
AHLSKOG M PALOHEIMO J STUBB H ASSADI A
Citation
M. Ahlskog et al., PRESSURE-DEPENDENT OPERATION IN POLY(3-ALKYLTHIOPHENE) FIELD-EFFECT TRANSISTORS AND SCHOTTKY DIODES, Synthetic metals, 65(1), 1994, pp. 77-80
Citations number
15
Categorie Soggetti
Physics, Condensed Matter","Metallurgy & Mining
Journal title
Synthetic metals → ACNP
ISSN journal
03796779
Volume
65
Issue
1
Year of publication
1994
Pages
77 - 80
Database
ISI
SICI code
0379-6779(1994)65:1<77:POIPFT>2.0.ZU;2-Q
Abstract
We have studied charge transport in thin films of poly(3-alkylthiophen es) by measuring polymeric field-effect transistors and Schottky diode s under hydrostatic pressure. The field-effect mobility and conductivi ty were found to increase with increasing pressure below 2 kbar satura ting above 2 kbar to a value of about 1.5-2.0 times the ambient pressu re value. A roughly similar increase in the forward biased diode curre nt was observed. The estimated compressibilities are in reasonable agr eement with the results of other recent studies.