GAIN SWITCHING IN HIGH-SPEED SEMICONDUCTOR-LASERS - INTERMEDIATE-SIGNAL ANALYSIS

We present a simple analytical treatment of gain switching in semicond uctor lasers at intermediate intensities, based on a second-order pert urbative treatment of the rate equations. The analytical solution is c ompared with experimental nonlinear transient relaxation oscillations measured using high-speed, p-doped In0.35Ga0.65As/GaAs multiple quantu m well lasers, under perturbation of the dc electrical bias by pulsed optical excitation. The experimental results show excellent agreement with the analytical solution, even at excitation densities beyond the small-signal regime.