MOLECULAR-BEAM EPITAXIAL-GROWTH OF INXAL1-XAS ON GAAS

The surface reconstruction of InAlAs on GaAs between 490 and 700-degre es-C has been investigated during molecular-beam epitaxial growth. It is found that the surface reconstruction of InAlAs is similar to that of AlGaAs alloy. The (2x1) and (1x1) surfaces occur at a substrate tem perature between 490 and 650-degrees-C, while at a temperature above 6 50-degrees-C, the ordered As-stabilized (3x2 surface appeared during t he steady-state growth. InAlAs/GaAs heteroepitaxial layers have been a nalyzed and reveal that the residual strain in the epilayers is strong ly dependent on the composition as well as the thickness of the epilay er. These characteristics are consistent with the InGaAs/GaAs system.