NEW PROPERTIES AND APPLICATIONS OF ELECTRON-BEAM EVAPORATED SILICON IN SUBMICRON ELEVATED SOURCE DRAIN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS/

We report the porous nature of electron-beam evaporated silicon on the sidewalls of metal-oxide-semiconductor field-effect transistor (MOSFE T) gate spacers. This property was used to develop and fabricate submi cron elevated source/drain MOSFETs with 200-500 angstrom ultrashallow junctions. Using electron-beam evaporated silicon reduces fabrication complexity, overcomes common problems inherent to elevated source/drai n MOSFETs, and yields a self-aligned process.