PHASE MODULATION IN INGAASP BARRIER, RESERVOIR, AND QUANTUM-WELL ELECTRON-TRANSFER STRUCTURES, GROWN BY CHEMICAL BEAM EPITAXY

We have measured phase modulation in the first chemical beam epitaxy g rown InGaAsP/InP barrier, reservoir, and quantum well electron transfe r structures. We obtain a negative refractive index change, DELTAn, si milar to that found in the InGaAs/InAlAs system. Using new designs to reduce the leakage current in this material system, we obtain a leakag e current <1 A/CM2. Our results show an unexpected negative DELTAn for both positive and negative bias, which we explain using calculations of the wave function.