ELECTRON-OPTICAL PHONON-SCATTERING RATES IN 2D STRUCTURES - EFFECTS OF INDEPENDENT ELECTRON AND PHONON CONFINEMENT

Authors
POZELA J BUTKUS G JUCIENE V
Citation
J. Pozela et al., ELECTRON-OPTICAL PHONON-SCATTERING RATES IN 2D STRUCTURES - EFFECTS OF INDEPENDENT ELECTRON AND PHONON CONFINEMENT, Semiconductor science and technology, 9(8), 1994, pp. 1480-1483
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
8
Year of publication
1994
Pages
1480 - 1483
Database
ISI
SICI code
0268-1242(1994)9:8<1480:EPRI2S>2.0.ZU;2-Q
Abstract
Two-dimensional structures with different thicknesses of confined opti cal phonon and electron quantum wells are proposed. The confined elect ron-polar optical phonon scattering rates in these structures when an electron quantum well is localized inside a phonon one are calculated. The independent electron and phonon confinement allows the scattering rates by confined and interface phonons to change significantly. The effect of independent electron and phonon confinement is demonstrated for an AlAs/GaAs/AlAs structure.