AN (ALGA)AS GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR WITH A RESONANT-TUNNELING COLLECTOR/

Authors
SHIGEKAWA N BETON PH BUHMANN H EAVES L HENINI M JOHNSTON D
Citation
N. Shigekawa et al., AN (ALGA)AS GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR WITH A RESONANT-TUNNELING COLLECTOR/, Semiconductor science and technology, 9(8), 1994, pp. 1500-1503
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
8
Year of publication
1994
Pages
1500 - 1503
Database
ISI
SICI code
0268-1242(1994)9:8<1500:A(GHBW>2.0.ZU;2-D
Abstract
An (AlGa)As/GaAs heterojunction bipolar transistor with a double-barri er resonant-tunnelling structure (DBRTS) inserted between the base and the collector has been investigated. Peaks due to resonant-tunnelling electrons have been observed in the device characteristics at 4.2 K. We have extracted the energy levels in the quantum.well from the bias voltages for the peaks. The highest measured level corresponds to an e nergy greater than the barrier height.