TRANSIENT ENHANCED DIFFUSION DURING POSTIMPLANT ANNEALING OF SILICON

Authors
BENNETT DJ PRICE TE
Citation
Dj. Bennett et Te. Price, TRANSIENT ENHANCED DIFFUSION DURING POSTIMPLANT ANNEALING OF SILICON, Semiconductor science and technology, 9(8), 1994, pp. 1535-1542
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
8
Year of publication
1994
Pages
1535 - 1542
Database
ISI
SICI code
0268-1242(1994)9:8<1535:TEDDPA>2.0.ZU;2-2
Abstract
A method for calculating diffusion enhancement due to dopant-defect pa iring in ion-implanted silicon is described. The number of dopant-defe ct pairs is calculated from a general defect clustering model. The ass umption that a net dopant flux arises from dopant-defect pair gradient s leads to the calculation of an initial enhanced diffusion coefficien t. This diffusion enhancement is shown to be consistent with measured transient diffusion.