STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF DOPED MICROCRYSTALLINE SILICON-CARBIDE FILMS

Authors
DEMICHELIS F CROVINI G PIRRI CF TRESSO E FANCIULLI M PIESARKIEWICZ T STAPINSKI T
Citation
F. Demichelis et al., STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF DOPED MICROCRYSTALLINE SILICON-CARBIDE FILMS, Semiconductor science and technology, 9(8), 1994, pp. 1543-1548
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
8
Year of publication
1994
Pages
1543 - 1548
Database
ISI
SICI code
0268-1242(1994)9:8<1543:SAOPOD>2.0.ZU;2-X
Abstract
Undoped and phosphorus-doped microcrystalline silicon carbide (muc-SiC :H) films were deposited by plasma-enhanced chemical vapour deposition (PECVD) with high hydrogen dilution and high RF Power density. The do ped films obtained have a bandgap up to 2.0 eV and electrical dark con ductivity up to 17 S cm-1. The thermoelectric power (TEP) measurements and the behaviour of the conductivity and Hall mobility as functions of temperature provided information on electrical transport phenomena. Structural and optical measurements confirmed properties of this mate rial for application in LED and solar cell technology.