S. Holmes et al., EXPERIMENTAL-DETERMINATION OF THE TRANSPORT-PROPERTIES OF COMPOSITE FERMIONS WITH REDUCED LANDE G-FACTOR, Semiconductor science and technology, 9(8), 1994, pp. 1549-1553
We demonstrate experimentally the existence of unpolarized spin states
of composite fermions in the fractional quantum Hall effect regime. T
he modulus of the effective Lande g-factor was reduced using hydrostat
ic pressure and the transport properties of the first and second hiera
rchy of composite fermion states were studied in an AlGaAs/GaAs hetero
junction in perpendicular magnetic fields. The activation energy of st
ates at filling factor, nu = 2/3 and 2/5 show a variation with effecti
ve Lande g-factor that is consistent with a spin-unpolarized ground st
ate at these filling factors. The rapid destruction of the energy gap
in the first composite fermion hierarchy at nu = 2/5 follows the press
ure dependence of the effective Lande g-factor of free electrons in Ga
As. We show that structure in sigma(xx) initially absent at ambient pr
essure, develops at even filling factor fractions corresponding to met
allic states at nu = 3/8 and nu = 5/12 under reduced Lande g-factor co
nditions. Consistent behaviour is observed independent of the carrier
density in the dilute electron system at 4.4 x 10(10) and 6.8 x 10(10)
cm-2.