CHARACTERIZATION OF LATTICE-MATCHED SINGLE IN1-XGAXASYP1-Y QUANTUM-WELLS GROWN BY CONVENTIONAL LIQUID-PHASE EPITAXY

Authors
BEHCER S",GOTTSCHALCH,"WAGNER G SCHWABE R STAEHLI JL
Citation
G. Behcer S",gottschalch,"wagner et al., CHARACTERIZATION OF LATTICE-MATCHED SINGLE IN1-XGAXASYP1-Y QUANTUM-WELLS GROWN BY CONVENTIONAL LIQUID-PHASE EPITAXY, Semiconductor science and technology, 9(8), 1994, pp. 1558-1563
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
9
Issue
8
Year of publication
1994
Pages
1558 - 1563
Database
ISI
SICI code
0268-1242(1994)9:8<1558:COLSIQ>2.0.ZU;2-Y
Abstract
In this letter the liquid phase epitaxial growth of In0.71Ga0.29As0.68 P0.32 (lambda(g) = 1.32 mum) single quantum well structures lattice ma tched to (001) InP substrates is reported. The electrical and optical confinement was formed either by InP or In0.88Ga0.12As0.26 p0.74 (lamb da(g) = 1.05 mum). Low-temperature photoluminescence was employed to p rove the samples capable of displaying quantum size effects. Energy up shifts up to 125 meV were measured for InP-clad quantum wells of about 50 angstrom thickness. All multilayered stacks originate from step-co oling growth cycles in an ordinary linear slider boat. Streamlining of the experimental conditions has led to a conspicuous decrease in the FWHM values of the blueshift signals.