CALCULATION OF MOBILITY IN SEMICONDUCTORS DUE TO IONIZED IMPURITIES

Authors
UNAL B ALKAN B OZDEMIR AR
Citation
B. Unal et al., CALCULATION OF MOBILITY IN SEMICONDUCTORS DUE TO IONIZED IMPURITIES, Physics letters. A, 191(1-2), 1994, pp. 25-30
Citations number
18
Categorie Soggetti
Physics
Journal title
Physics letters. A → ACNP
ISSN journal
03759601
Volume
191
Issue
1-2
Year of publication
1994
Pages
25 - 30
Database
ISI
SICI code
0375-9601(1994)191:1-2<25:COMISD>2.0.ZU;2-J
Abstract
Our recently derived mobility formula has been applied to the calculat ion of the mobility mu in semiconductors arising from impurities. Comp arison of our results with measured mu values shows that they remain c lose to each other in a wide temperature region.