MULTIVALUED DISTRIBUTIONS OF ELECTRONS AMONG VALLEYS IN MULTILAYER STRUCTURES AND P-N-JUNCTIONS

Citation
Zs. Gribnikov et An. Korshak, MULTIVALUED DISTRIBUTIONS OF ELECTRONS AMONG VALLEYS IN MULTILAYER STRUCTURES AND P-N-JUNCTIONS, Semiconductors, 28(6), 1994, pp. 558-563
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
28
Issue
6
Year of publication
1994
Pages
558 - 563
Database
ISI
SICI code
1063-7826(1994)28:6<558:MDOEAV>2.0.ZU;2-E
Abstract
The formation of a domain (layered) structure in a transverse electric field in the course of the multivalued Sasaki effect in thin-layer sa mples on conducting substrates is examined theoretically. In such samp les, the electron density may vary substantially within a domain by vi rtue of a variation in the potential difference between the active lay er and the substrate. Such density variations lead to a threshold or l ower limit-a lower limit on the electron density for a given active-la yer-substrate capacitance-for the existence of transverse fields. Ther e is no such lower limit in bulk samples. This limit gives rise to a d omain structure of a new type. In this new structure, double layers wi th oppositely directed transverse fields are separated from each other by field-free regions with a low and fixed electron density.