Zs. Gribnikov et An. Korshak, MULTIVALUED DISTRIBUTIONS OF ELECTRONS AMONG VALLEYS IN MULTILAYER STRUCTURES AND P-N-JUNCTIONS, Semiconductors, 28(6), 1994, pp. 558-563
The formation of a domain (layered) structure in a transverse electric
field in the course of the multivalued Sasaki effect in thin-layer sa
mples on conducting substrates is examined theoretically. In such samp
les, the electron density may vary substantially within a domain by vi
rtue of a variation in the potential difference between the active lay
er and the substrate. Such density variations lead to a threshold or l
ower limit-a lower limit on the electron density for a given active-la
yer-substrate capacitance-for the existence of transverse fields. Ther
e is no such lower limit in bulk samples. This limit gives rise to a d
omain structure of a new type. In this new structure, double layers wi
th oppositely directed transverse fields are separated from each other
by field-free regions with a low and fixed electron density.