METHOD FOR PURIFYING A SILICON-CARBIDE SURFACE IN HIGH-VACUUM

Authors
ANDREEV AN ANIKIN MM SYRKIN AL CHELNOKOV VE
Citation
An. Andreev et al., METHOD FOR PURIFYING A SILICON-CARBIDE SURFACE IN HIGH-VACUUM, Semiconductors, 28(6), 1994, pp. 577-579
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
6
Year of publication
1994
Pages
577 - 579
Database
ISI
SICI code
1063-7826(1994)28:6<577:MFPASS>2.0.ZU;2-5
Abstract
A procedure is proposed for purifying the surface of silicon carbide. It involves a preliminary oxidation, followed by removal of the oxide by bombardment with electrons of a certain energy in high vacuum. The, resulting SiC-6H surface is undamaged and free of contaminants. The r esults of a monitoring of the surface purity by Auger spectroscopy thr oughout all stages of the processing are reported.