PROPERTIES OF A CENTER ASSOCIATED WITH AN AL IMPURITY IN 6H-SIC

Authors
KUZNETSOV NI DMITRIEV AP FURMAN AS
Citation
Ni. Kuznetsov et al., PROPERTIES OF A CENTER ASSOCIATED WITH AN AL IMPURITY IN 6H-SIC, Semiconductors, 28(6), 1994, pp. 584-586
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
6
Year of publication
1994
Pages
584 - 586
Database
ISI
SICI code
1063-7826(1994)28:6<584:POACAW>2.0.ZU;2-R
Abstract
A study has been made of 6H-SiC diodes in which the p-type base region was doped with aluminum to various concentrations. Deep-level current spectroscopy yields the properties of the center associated with the Al impurity. The cross section for the capture of a hole by a charged center in silicon carbide is derived theoretically. Estimates agree wi th experimental results.