NONLINEAR-OPTICAL ABSORPTION NEAR THE FUNDAMENTAL ABSORPTION-EDGE OF HEAVILY-DOPED N-TYPE IN

Authors
BYSTRIMOVICH SA MALEVICH VL KARPUSHKO FV SINITSYN GV UTKIN IA ZAPOROZHCHENKO RG
Citation
Sa. Bystrimovich et al., NONLINEAR-OPTICAL ABSORPTION NEAR THE FUNDAMENTAL ABSORPTION-EDGE OF HEAVILY-DOPED N-TYPE IN, Semiconductors, 28(6), 1994, pp. 590-593
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
6
Year of publication
1994
Pages
590 - 593
Database
ISI
SICI code
1063-7826(1994)28:6<590:NANTFA>2.0.ZU;2-W
Abstract
The nonlinear optical transmission of heavily doped, lightly compensat ed n-type InP:Sn has been measured in the spectral region near the fun damental absorption edge. Nonlinear transmission spectra have also bee n calculated on the basis of a semiclassical model of fluctuational le vels. A screening of the tail of the density of states by nonequilibri um carriers plays an important role in the observed bleaching in this spectral region.