TUNNELING-RECOMBINATION CURRENTS IN NONIDEAL INGAASP INP HETEROSTRUCTURES/

Citation
Mv. Karachevtseva et al., TUNNELING-RECOMBINATION CURRENTS IN NONIDEAL INGAASP INP HETEROSTRUCTURES/, Semiconductors, 28(6), 1994, pp. 594-596
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
28
Issue
6
Year of publication
1994
Pages
594 - 596
Database
ISI
SICI code
1063-7826(1994)28:6<594:TCINII>2.0.ZU;2-C
Abstract
The current-voltage characteristics of nonideal InGaAsP/InP heterostru ctures have been studied in the temperature range 77-350 K. The featur es observed are explained on the basis of a model of tunneling-recombi nation currents. Changes in the charge in the surface states at the he terojunction, which occur as a result of changes in the voltage and th e temperature, are taken into account. The density of surface states i s estimated. Parameters of the band diagram are found.