CHANGES CAUSED IN THE ANISOTROPY OF CARRIER SCATTERING IN N-TYPE SI BY HIGH HYDROSTATIC-PRESSURE NEAR ROOM-TEMPERATURE

Authors
BARANSKII PI VIDALKO EN
Citation
Pi. Baranskii et En. Vidalko, CHANGES CAUSED IN THE ANISOTROPY OF CARRIER SCATTERING IN N-TYPE SI BY HIGH HYDROSTATIC-PRESSURE NEAR ROOM-TEMPERATURE, Semiconductors, 28(6), 1994, pp. 614-615
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
6
Year of publication
1994
Pages
614 - 615
Database
ISI
SICI code
1063-7826(1994)28:6<614:CCITAO>2.0.ZU;2-O
Abstract
The resistivity of n-type Si single crystals, before and after the app lication of a high hydrostatic pressure (10 kbar, 7 days), was measure d as a pressure was applied along the current direction. The results s how that the hydrostatic pressure affects the anisotropy of the electr on scattering while causing no substantial structural damage in the cr ystal.