THE FORMATION OF SILICON-CARBIDE FILMS FROM DISILANE DERIVATIVES

Authors
HENGGE E ZECHMANN A HOFER F POLT P LUX B DANZINGER M HAUBNER R
Citation
E. Hengge et al., THE FORMATION OF SILICON-CARBIDE FILMS FROM DISILANE DERIVATIVES, Advanced materials, 6(7-8), 1994, pp. 584-587
Citations number
10
Categorie Soggetti
Material Science
Journal title
Advanced materials → ACNP
ISSN journal
09359648
Volume
6
Issue
7-8
Year of publication
1994
Pages
584 - 587
Database
ISI
SICI code
0935-9648(1994)6:7-8<584:TFOSFF>2.0.ZU;2-N
Abstract
The formation of silicon carbide films presents problems arising from the fact that the precursors employed are usually a mixture of compoun ds. It is demonstrated that high-quality silicon carbide films (see Fi gure) can be produced by chemical vapor deposition using easily availa ble disilane derivatives as the precursor.