ANODIC-OXIDATION OF INXGA1-XASYP1-Y EPITAXIAL LAYERS

We present data on anodic oxidation of InxGa1-xAsyP1-y epitaxial layer s for the first time. An ethylene glycol-based solution was used as an electrolyte for epitaxial layers grown by gas-source molecular beam e pitaxy that were lattice-matched to InP or GaAs. The thickness of the oxidized layer depends linearly on the anodic voltage. The oxidation r ate varies greatly with the group V As/P composition ratio, e.g., 15.4 angstrom/V for In0.04Ga0.96As0.02P0.08 with 9.6 AN for In0.45Ga0.55As 0.11P0.89, but is almost independent on the group III Ga/In ratio, e.g ., 11.0 angstrom/V for In0.85Ga0.15As0.33P0.67 and 11.5 angstrom/V for In0.31Ga0.69As0.39P0.61. The data obtained makes the anodic oxidation technique applicable to a wide range of semiconductor device processi ng.