SI DEPOSITION FROM CHLOROSILANES .2. NUMERICAL-ANALYSIS OF THERMOFLUID EFFECTS ON DEPOSITION

Authors
NARUSAWA U
Citation
U. Narusawa, SI DEPOSITION FROM CHLOROSILANES .2. NUMERICAL-ANALYSIS OF THERMOFLUID EFFECTS ON DEPOSITION, Journal of the Electrochemical Society, 141(8), 1994, pp. 2078-2083
Citations number
7
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
141
Issue
8
Year of publication
1994
Pages
2078 - 2083
Database
ISI
SICI code
0013-4651(1994)141:8<2078:SDFC.N>2.0.ZU;2-9
Abstract
Based on the effusive flux model developed in Part I (the preceding ar ticle), various effects of flow and thermal fields are investigated nu merically for deposition from SiCl4 dilutely mixed in hydrogen passing through a rectangular reactor. Generation and transport of HCl and Si Cl2 near the deposition surface is examined in detail. Thermofluid eff ects on deposition are presented in terms of such nondimensional param eters as the inverse Graetz number and the Rayleigh number.