W. Vanschaik et al., INFLUENCE OF IMPURITIES ON THE LUMINESCENCE QUANTUM EFFICIENCY OF THELAMP PHOSPHOR (CE, GD, TB)MGB5O10, Journal of the Electrochemical Society, 141(8), 1994, pp. 2201-2207
The influence of impurities on the luminescence quantum efficiency of
Ce0.2Gd0.6Tb0.2MgB5O10 has been studied. Low concentrations of Pr3+, N
d3+, Dy3+, Ho3+, and Er3+ do not compete efficiently with Gd3+ and Tb3
+ for the excitation energy on the Ce3+ ions. However, the luminescenc
e efficiency of Ce3+ is strongly decreased by Sm3+ and Eu3+ due to an
electron transfer process. The luminescence efficiency of Ce3+ is also
decreased by Cr2+, Mn2+, Fe2+, and Ni2+ due to energy transfer to the
se ions. In the case of Cr3+ the luminescence efficiency of Ce3+ is qu
enched due to competitive absorption. The luminescence efficiency of G
d3+ is strongly decreased by Cr2+, Mn2+, and Fe2+ due to energy transf
er to these ions. The excitation energy migrates over the Gd3+ ions. T
herefore, low concentrations of impurities have a considerable effect
on the luminescence efficiency of Gd3+. Since there is no energy migra
tion over the Tb3+ ions, small concentrations of impurities have a lim
ited effect on the luminescence efficiency of Tb3+.