A CHEMICAL ETCHING SOLUTION FOR THE DETERMINATION OF THE CRYSTALLOGRAPHIC ORIENTATION OF GASB BY OPTICAL REFLECTOGRAMS

Authors
GODINES JA DEANDA F CANALES A BANOS L RIOSJARA D
Citation
Ja. Godines et al., A CHEMICAL ETCHING SOLUTION FOR THE DETERMINATION OF THE CRYSTALLOGRAPHIC ORIENTATION OF GASB BY OPTICAL REFLECTOGRAMS, Journal of the Electrochemical Society, 141(8), 1994, pp. 2220-2222
Citations number
7
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
141
Issue
8
Year of publication
1994
Pages
2220 - 2222
Database
ISI
SICI code
0013-4651(1994)141:8<2220:ACESFT>2.0.ZU;2-7
Abstract
GaSb ingots were oriented along the low index crystal planes, (111), ( 110), and (100), using an optical technique. The surfaces etched with an HCl:CuCl solution show very well-defined figures, revealing the hig h symmetry of the surface orientations. The reflectograms obtained fro m these surfaces allow the precise orientation of GaSb crystals, and t hey can be used to distinguish between the (111)A and (111)B faces.