A NEW HYDROGEN SENSOR USING A POLYCRYSTALLINE DIAMOND-BASED SCHOTTKY DIODE

Citation
Wp. Kang et al., A NEW HYDROGEN SENSOR USING A POLYCRYSTALLINE DIAMOND-BASED SCHOTTKY DIODE, Journal of the Electrochemical Society, 141(8), 1994, pp. 2231-2234
Citations number
12
Categorie Soggetti
Electrochemistry
ISSN journal
00134651
Volume
141
Issue
8
Year of publication
1994
Pages
2231 - 2234
Database
ISI
SICI code
0013-4651(1994)141:8<2231:ANHSUA>2.0.ZU;2-9
Abstract
A new hydrogen sensor utilizing plasma-enhanced chemical vapor deposit ed diamond in conjunction with palladium (Pd) metal has been developed . The device is fabricated in a layered Pd/undoped diamond/p-doped dia mond Schottky diode configuration. Hydrogen sensing characteristics of the device have been examined in terms of sensitivity, linearity, res ponse rate, and response time as a function of temperature and hydroge n partial pressure. Hydrogen adsorption activation energy is investiga ted in the temperature range from 27 to 85-degrees-C. Analysis of the steady-state reaction kinetics using the I-V method confirm that the h ydrogen adsorption process is responsible for the barrier height chang e in the diamond Schottky diode. The ability to fabricate diamond-base d hydrogen sensor on a variety of substrates makes the device very ver satile for gas sensing.