THE FORMATION OF BORON-DOPED POLYCRYSTALLINE SI WITH EXTREMELY LOW RESISTIVITIES AT LOW-TEMPERATURES, (VOL 141, PG 1334, 1994)

Authors
SHIOZAWA J KASAI Y MIKATA Y YAMABE K
Citation
J. Shiozawa et al., THE FORMATION OF BORON-DOPED POLYCRYSTALLINE SI WITH EXTREMELY LOW RESISTIVITIES AT LOW-TEMPERATURES, (VOL 141, PG 1334, 1994), Journal of the Electrochemical Society, 141(8), 1994, pp. 2265-2265
Citations number
1
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
141
Issue
8
Year of publication
1994
Pages
2265 - 2265
Database
ISI
SICI code
0013-4651(1994)141:8<2265:TFOBPS>2.0.ZU;2-X