ELECTRICAL-RESISTIVITY OF AMORPHOUS FERROMAGNETIC MATERIALS

Authors
PARK MJ LEE SP KIM CK NAHM K RIM YH PARK CM NIKITOV SA
Citation
Mj. Park et al., ELECTRICAL-RESISTIVITY OF AMORPHOUS FERROMAGNETIC MATERIALS, Journal of the Korean Physical Society, 27(4), 1994, pp. 448-451
Citations number
11
Categorie Soggetti
Physics
Journal title
Journal of the Korean Physical Society → ACNP
ISSN journal
03744884
Volume
27
Issue
4
Year of publication
1994
Pages
448 - 451
Database
ISI
SICI code
0374-4884(1994)27:4<448:EOAFM>2.0.ZU;2-N
Abstract
A new theoretical formula for the electrical resistivity of amorphous ferromagnetic materials is proposed. The disorder effect is incorporat ed by introducing the fluctuation in the exchange energy. The obtained theoretical results are in good agreement with the experimental data. However, the results also indicate that the amorphous magnetism is at least partially of an itinerant nature. The consequence of this indic ation is discussed.