INTEGRATION OF LEDS AND GAAS CIRCUITS BY MBE REGROWTH

Fully processed VLSI GaAs MESFET circuits, available through the MOSIS service, have recently been shown to be electrically stable after 3-h thermal cycles at 500-degrees-C. It is therefore feasible to epitaxia lly regrow photonic device heterostructures directly on high-density e lectronic circuits yielding monolithic optoelectronic VLSI circuits. T he MBE growth, planarization, and LED fabrication of the first optoele ctronic circuit using this novel integration technique are described.