TRAVELING CURRENT-DENSITY FILAMENTS IN MULTILAYERED SILICON DEVICES

Authors
NIEDERNOSTHEIDE FJ KREIMER M KUKUK B SCHULZE HJ PURWINS HG
Citation
Fj. Niedernostheide et al., TRAVELING CURRENT-DENSITY FILAMENTS IN MULTILAYERED SILICON DEVICES, Physics letters. A, 191(3-4), 1994, pp. 285-290
Citations number
25
Categorie Soggetti
Physics
Journal title
Physics letters. A → ACNP
ISSN journal
03759601
Volume
191
Issue
3-4
Year of publication
1994
Pages
285 - 290
Database
ISI
SICI code
0375-9601(1994)191:3-4<285:TCFIMS>2.0.ZU;2-V
Abstract
Spatially and temporally resolved measurements of the electroluminesce nce and the potential distribution reveal the existence of travelling current density filaments in silicon p-n-p-n devices. Differences and similarities of both distributions are discussed.