A STUDY OF THE OXIDE GROWN ON TB AND TERBIUM SILICIDE BY XPS, AES ANDXRD

Authors
BERNING GLP SWART HC
Citation
Glp. Berning et Hc. Swart, A STUDY OF THE OXIDE GROWN ON TB AND TERBIUM SILICIDE BY XPS, AES ANDXRD, Applied surface science, 78(4), 1994, pp. 339-343
Citations number
13
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
78
Issue
4
Year of publication
1994
Pages
339 - 343
Database
ISI
SICI code
0169-4332(1994)78:4<339:ASOTOG>2.0.ZU;2-U
Abstract
Pure Tb as well as TbSi1.7/Si(100) were oxidized at 600-degrees-C for 30 min at atmospheric pressure. Auger, XPS and XRD spectra of the samp les were measured before and after oxidation. The XRD results show tha t pure Th oxidizes to form TbO1.81 while the oxide layer of the oxidiz ed TbSi1.7 consists of Tb2SiO5. During sputtering of the Tb2SiO5 layer , Auger spectra show that Th and not Si is oxidized, while the XPS spe ctra show that Th as well as Si are oxidized as expected from the XRD results.