SCANNING-TUNNELING-MICROSCOPY STUDIES OF GALENA - THE MECHANISM OF OXIDATION IN AIR

Citation
Bs. Kim et al., SCANNING-TUNNELING-MICROSCOPY STUDIES OF GALENA - THE MECHANISM OF OXIDATION IN AIR, Applied surface science, 78(4), 1994, pp. 385-397
Citations number
19
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
78
Issue
4
Year of publication
1994
Pages
385 - 397
Database
ISI
SICI code
0169-4332(1994)78:4<385:SSOG-T>2.0.ZU;2-Q
Abstract
Scanning tunnelling microscopy (STM) was used to study the surface oxi dation of galena in air. The main aim of the study was to compare the surface oxidation behaviour of synthetic and natural galena samples an d to contrast the different mechanisms for the air oxidation process. Topographical imaging of the galena surfaces showed the growth of nano metre-scale oxidation products with time. The position of these oxidat ion products and the rate of their formation depended strongly on gale na type. Oxidation products formed on natural galena after a few minut es exposure to air, whereas synthetic galena required an induction per iod of over an hour before oxidation products could be detected. X-ray photoelectron spectroscopy confirmed the different rates of oxidation and showed lead hydroxide and sulphate to be the main oxidation produ cts. Oxidation product growth on the synthetic sample occurred prefere ntially on edges and dislocations rather than on the faces of the gale na surface. Oxidation product growth on the natural galena showed no s uch preference, with indiscriminate coverage of edges and faces. It is proposed that impurities present at the surface of the natural galena , which are absent in the synthetic galena, are responsible for the si gnificantly different oxidation behaviour.