OPTICAL-RESPONSE OF FREE-CARRIER PLASMA EFFECTS OF MEV ARSENIC-ION-IMPLANTED SILICON

Arsenic ions are implanted into silicon at an incident energy of 3 or 5 MeV to a dose of 1 x 10(16) cm-2. Buried conductive layers are forme d in the Si substrate after annealing at 1050-degrees-C for 20 s. Infr ared (IR) reflection spectra in the wave number range of 500 to 4000 c m-1 are measured and interference fringes related to the optical respo nse of free-carrier plasma effects are observed. By detailed theoretic al analysis and computer simulation of the IR reflection spectra, the depth profile of the carrier concentration, the carrier mobility near maximum carrier concentration, and the carrier activation efficiency a re obtained. The physical interpretation of the results is given.