ELECTRIC-DIPOLE SPIN-RESONANCE OF GRAIN-BOUNDARIES IN MULTICRYSTALLINE SILICON

Citation
K. Schimpf et al., ELECTRIC-DIPOLE SPIN-RESONANCE OF GRAIN-BOUNDARIES IN MULTICRYSTALLINE SILICON, Physica status solidi. a, Applied research, 144(1), 1994, pp. 195-201
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
00318965
Volume
144
Issue
1
Year of publication
1994
Pages
195 - 201
Database
ISI
SICI code
0031-8965(1994)144:1<195:ESOGIM>2.0.ZU;2-N
Abstract
An electrically induced electron paramagnetic resonance signal is repo rted, which is observed at grain boundaries of multicrystalline solar silicon. The characteristic properties are a phase shift of 180-degree s relative to the P0 signal and a superlinear increase of the intensit y with microwave power. These properties can be qualitatively explaine d by a model of Koshelev et al., which was developed for conducting di slocations. This signal is considered to be the evidence for electrica l conductivity of grain boundaries at low temperatures (20 K).