CONTACT ELECTRIFICATION ON THIN SILICON-OXIDE IN VACUUM

Citation
T. Tsuyuguchi et al., CONTACT ELECTRIFICATION ON THIN SILICON-OXIDE IN VACUUM, JPN J A P 2, 33(7B), 1994, pp. 120001046-120001048
Citations number
16
Categorie Soggetti
Physics, Applied
Volume
33
Issue
7B
Year of publication
1994
Pages
120001046 - 120001048
Database
ISI
SICI code
Abstract
We investigated the microscopic dissipation of contact electrified cha rges on a thin SiO2 film in vacuum where a thin layer of water may be adsorbed on the surface using an atomic force microscope (AFM). Charge s with narrower spatial distributions were deposited in smaller amount s in vacuum than in air. Moreover, the deposited charge areas in vacuu m showed no broadening with time after contact electrification. These demonstrate that the rapid surface diffusion of the charges in air may be caused by a water layer adsorbed on the insulator surfaces.