SUBMICRON T-SHAPED GATE HEMT FABRICATION USING DEEP-UV LITHOGRAPHY

Authors
CHANG EY LIN KC LIU EH CHANG CY CHEN TH CHEN J
Citation
Ey. Chang et al., SUBMICRON T-SHAPED GATE HEMT FABRICATION USING DEEP-UV LITHOGRAPHY, IEEE electron device letters, 15(8), 1994, pp. 277-279
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
15
Issue
8
Year of publication
1994
Pages
277 - 279
Database
ISI
SICI code
0741-3106(1994)15:8<277:STGHFU>2.0.ZU;2-9
Abstract
A new combination of low/high/low sensitivity trilayer (PMMA/PMIPK/PMM A) resist system was used for deep UV lithography to fabricate submicr on T-shaped gate. Gate length as narrow as 0.2 mum is achieved. The Ga As HEMT's with 0.3 mum T-shaped Ti/Pt/Au gate is fabricated using this technology. The HEMT demonstrated a 0.6 dB noise figure and 13 dB ass ociated gain at 10 GHz. This deep UV lithography process provides a hi gh throughput and low cost alternative to E-beam lithography for submi cron T-gate fabrication.