HIGH-CURRENT P P+-DIAMOND SCHOTTKY DIODE

Epitaxial p-type Schottky diodes have been fabricated on p+-substrate. While the activation energy of the epitaxial layer conductivity is 39 0 meV, that of the substrate is only 50 meV. At forward bias the subst rate conductivity dominates above 150-degrees-C, leading for a 5 x 10( -5) cm2 area contact to a series resistance of 14 OMEGA at 150-degrees -C reducing to 8 OMEGA at 500-degrees-C. To our knowledge, this is the lowest series resistance reported so far for a diamond Schottky diode enabling extremely high current densities of 10(3) A/cm and a current rectification ratio at +/-2 V of 10(5) making these diodes already at tractive as high temperature rectifiers.