0.1-MU-M SCHOTTKY-COLLECTOR ALAS GAAS RESONANT-TUNNELING DIODES/

The Schottky-collector resonant tunneling diode (RTD) is an RTD with t he normal N+ collector and ohmic contact replaced by a Schottky contac t, thereby eliminating the associated parasitic resistance. With submi cron Schottky contact dimensions, the remaining components of the para sitic series resistance can be greatly reduced, resulting in an increa sed maximum frequency of oscillation, f(max). AlAs/GaAs Schottky-colle ctor RTDs were fabricated using 0.1 mum T-gate technology developed fo r high electron mobility transistors. From their measured dc and micro wave parameters, and including the effect of the quantum well lifetime , f(max) = 900 GHz is computed.