The Schottky-collector resonant tunneling diode (RTD) is an RTD with t
he normal N+ collector and ohmic contact replaced by a Schottky contac
t, thereby eliminating the associated parasitic resistance. With submi
cron Schottky contact dimensions, the remaining components of the para
sitic series resistance can be greatly reduced, resulting in an increa
sed maximum frequency of oscillation, f(max). AlAs/GaAs Schottky-colle
ctor RTDs were fabricated using 0.1 mum T-gate technology developed fo
r high electron mobility transistors. From their measured dc and micro
wave parameters, and including the effect of the quantum well lifetime
, f(max) = 900 GHz is computed.