METAL-TO-METAL ANTIFUSES WITH VERY THIN SILICON DIOXIDE FILMS

Authors
ZHANG G HU C YU P CHIANG S HAMDY E
Citation
G. Zhang et al., METAL-TO-METAL ANTIFUSES WITH VERY THIN SILICON DIOXIDE FILMS, IEEE electron device letters, 15(8), 1994, pp. 310-312
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
15
Issue
8
Year of publication
1994
Pages
310 - 312
Database
ISI
SICI code
0741-3106(1994)15:8<310:MAWVTS>2.0.ZU;2-U
Abstract
Antifuse samples with very thin insulating oxide were fabricated using a technique of two-step PECVD oxide deposition. Dielectric strength a s high as 13 MV/cm was obtained for our samples. Defect density and un iformity have been improved this way. The on-state resistance of the p rogrammed antifuses shows a stronger dependence on the oxide thickness when it was programmed at the lower current than when it was programm ed at the higher current.