THE ELECTRIC-FIELD DISTRIBUTION OF P-I-N STRUCTURES MADE OF GAAS

Authors
ILINSKII AV CHAVEZ F PRUTSKIJ TA SILVAANDRADE F
Citation
Av. Ilinskii et al., THE ELECTRIC-FIELD DISTRIBUTION OF P-I-N STRUCTURES MADE OF GAAS, Revista Mexicana de Fisica, 40(4), 1994, pp. 602-608
Citations number
6
Categorie Soggetti
Physics
Journal title
Revista Mexicana de Fisica → ACNP
ISSN journal
0035001X
Volume
40
Issue
4
Year of publication
1994
Pages
602 - 608
Database
ISI
SICI code
0035-001X(1994)40:4<602:TEDOPS>2.0.ZU;2-6
Abstract
The spacial electric field distribution of an inverse biased GaAs p-i- n diode structure was optically studied. The measurement method is bas ed on the Franz Keldysh effect. The light incides on the diode structu re in the perpendicular direction to the electric field. We estimated the screening time of the electric field, and other structure paramete rs as well.