VOLTAGE GENERATION ON CLEAVAGE OF SILICON

Authors
LI DG HANEMAN D MCALPINE NS CHEN B
Citation
Dg. Li et al., VOLTAGE GENERATION ON CLEAVAGE OF SILICON, Physical review letters, 73(8), 1994, pp. 1170-1173
Citations number
22
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
73
Issue
8
Year of publication
1994
Pages
1170 - 1173
Database
ISI
SICI code
0031-9007(1994)73:8<1170:VGOCOS>2.0.ZU;2-1
Abstract
Voltage pulses up to 0.39 V are generated on cleaving Si wafers in air or vacuum. Current pulses up to 5 mA are also generated between conta cts on either side of the crack. The phenomena are explained in terms of dipole generation due to loss of centrosymmetric properties about a crack.