POWER ADDED EFFICIENCY AND GAIN IMPROVEMENT IN MESFET AMPLIFIERS USING AN ACTIVE HARMONIC LOADING TECHNIQUE

Authors
GHANNOUCHI FM BEAUREGARD F KOUKI AB
Citation
Fm. Ghannouchi et al., POWER ADDED EFFICIENCY AND GAIN IMPROVEMENT IN MESFET AMPLIFIERS USING AN ACTIVE HARMONIC LOADING TECHNIQUE, Microwave and optical technology letters, 7(13), 1994, pp. 625-627
Citations number
NO
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Microwave and optical technology letters → ACNP
ISSN journal
08952477
Volume
7
Issue
13
Year of publication
1994
Pages
625 - 627
Database
ISI
SICI code
0895-2477(1994)7:13<625:PAEAGI>2.0.ZU;2-B
Abstract
A six-port-based multiharmonic load-pull setup is used to characterize a medium-power MESFET transistor for the design of microwave amplifie rs. Complete load-pull measurements at the fundamental (1.7 GHz) and t he second harmonic (3.4 GHz) are obtained for two bias points in class A and AB operation. It is shown that the power gain and the power add ed efficiency can vary up 0.6 dB and 6%, respectively, as the phase of the second harmonic load is changed. (C) 1994 John Wiley & Sons, Inc.