ANALYSIS OF SI SI(X)GE(1-X)/SI MICROSTRUCTURES BY SPECTROSCOPIC ELLIPSOMETRY/

Authors
HULSE JE HELLER LM ROLFE SJ
Citation
Je. Hulse et al., ANALYSIS OF SI SI(X)GE(1-X)/SI MICROSTRUCTURES BY SPECTROSCOPIC ELLIPSOMETRY/, Thin solid films, 248(2), 1994, pp. 140-144
Citations number
12
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
248
Issue
2
Year of publication
1994
Pages
140 - 144
Database
ISI
SICI code
0040-6090(1994)248:2<140:AOSSMB>2.0.ZU;2-7
Abstract
Spectroscopic ellipsometry is used to examine the microstructure of tw o buried SixGe1-x alloy films grown by molecular beam epitaxy. In each case the optical measurements show these heterostructure materials to differ significantly in composition and thickness from those which we re intended. These discrepancies indicate that there is substantial mi xing of species across interfaces. Spectroscopic ellipsometry, which i n principle could be performed in situ to monitor the growth of such m aterials, is shown to provide a quick diagnostic of this intermixing.