EFFECTIVENESS OF I(DDQ) TESTING IN CMOS L SI

The combined use of conventional testing methods and IDDQ testing meth od is very effective in static CMOS LSIs for achieving higher quality of shippment. IDDQ testing is a method to detect some defects by measu ring the quiescent power supply current (IDDQ). This is based on the p roperty that the power supply current in the static CMOS LSI is nearly zero in the steady states. IDDQ testing was implemented to the gate a rray(1000 gates), and the rejected devices were analyzed. These failur e analyses showed that some faults, which were undetected by conventio nal DC parametric and functional testing, could be detected by IDDQ te sting.