STUDY OF TERNARY (TI,AL)N THIN-FILMS PREPARED BY ION-BEAM MIXING

Authors
PENG DL JIANG SR ZHAO XY CHENG GH
Citation
Dl. Peng et al., STUDY OF TERNARY (TI,AL)N THIN-FILMS PREPARED BY ION-BEAM MIXING, Materials letters, 20(3-4), 1994, pp. 179-182
Citations number
12
Categorie Soggetti
Material Science","Physics, Applied
Journal title
Materials letters → ACNP
ISSN journal
0167577X
Volume
20
Issue
3-4
Year of publication
1994
Pages
179 - 182
Database
ISI
SICI code
0167-577X(1994)20:3-4<179:SOT(TP>2.0.ZU;2-9
Abstract
Ternary (Ti, Al)N thin films were successfully deposited on the surfac e of pure iron by nitrogen ion beam mixing. The structure of the (Ti, Al)N films was studied by Auger electron spectroscopy (AES), X-ray pho toelectron spectroscopy (XPS) and X-ray diffraction analysis. The micr ohardness measurements showed that the microhardness of (Ti, Al) N thi n films is higher than that of TiN thin films prepared with the same N + ion implantation dose.