IN-SITU STUDY OF A STRONTIUM BETA-DIKETONATE PRECURSOR FOR THIN-FILM GROWTH BY ATOMIC LAYER EPITAXY

Citation
J. Aarik et al., IN-SITU STUDY OF A STRONTIUM BETA-DIKETONATE PRECURSOR FOR THIN-FILM GROWTH BY ATOMIC LAYER EPITAXY, Journal of materials chemistry, 4(8), 1994, pp. 1239-1244
Citations number
22
Categorie Soggetti
Chemistry Physical","Material Science
ISSN journal
09599428
Volume
4
Issue
8
Year of publication
1994
Pages
1239 - 1244
Database
ISI
SICI code
0959-9428(1994)4:8<1239:ISOASB>2.0.ZU;2-2
Abstract
Precursor properties of Sr(thd)2 (thd = 2,2,6,6-tetramethyl heptane-3, 5-dione) have been investigated using in situ mass monitoring of thin films during atomic layer epitaxy growth cycles. H2O and H2S were used as the other source materials. The Sr(thd)2 source temperature, T(s), significantly affects the growth rate. At T(S) = 240-270-degrees-C, a decrease of growth rate and in some cases even etching of the grown f ilm takes place. These phenomena can be explained by the decomposition of Sr(thd)2, which also explains the dependence of the growth rate on the reactor temperature, T(R), observed when T(S) < 240-degrees-C and 240 less-than-or-equal-to T(R)/degrees-C less-than-or-equal-to 400. T he growth experiments were complemented and the conclusions supported by separately studying (by mass spectrometry thermogravimetry, and dif ferential thermal analysis) the thermal stability and fractionation of the precursor.