INVESTIGATIONS INTO THE GROWTH OF ALN BY MOCVD USING TRIMETHYLSILYLAZIDE AS NITROGEN-SOURCE

Authors
AULD J HOULTON DJ JONES AC RUSHWORTH SA CRITCHLOW GW
Citation
J. Auld et al., INVESTIGATIONS INTO THE GROWTH OF ALN BY MOCVD USING TRIMETHYLSILYLAZIDE AS NITROGEN-SOURCE, Journal of materials chemistry, 4(8), 1994, pp. 1245-1247
Citations number
13
Categorie Soggetti
Chemistry Physical","Material Science
Journal title
Journal of materials chemistry → ACNP
ISSN journal
09599428
Volume
4
Issue
8
Year of publication
1994
Pages
1245 - 1247
Database
ISI
SICI code
0959-9428(1994)4:8<1245:IITGOA>2.0.ZU;2-H
Abstract
Thin films of AlN have been deposited by atmospheric-pressure MOCVD us ing trimethylaluminium (Me3Al) and trimethylsilylazide (Me3SiN3) as pr ecursors. The films were deposited at 300 or 450-degrees-C and had gro wth rates of up to 3 mum h-1